立方碳化硅(3C-SiC)薄膜通过化学气相沉积（CVD）制备在Si（100）衬底上。本论文主要通过椭偏光谱仪（SE）和拉曼散射对3C-SiC薄膜的微观结构和光学性能进行进一步的研究。根据SE的分析获得3C-SiC薄膜厚度；根据拉曼散射的分析：可从TO模式和LO模式的线形形状的拟合得到样品的相关长度和载流子浓度。结果表明：该碳化硅(3C-SiC)薄膜质量随膜厚度增加而得到提高，同时分析了外延层厚度对薄膜特性的影响。

    Cubic (3C)-SiC films were grown on Si (100) substrate by chemical vapor deposition (CVD). The microstructures and optical properties of 3C-SiC films have been studied by spectroscopic ellipsometry (SE) and Raman scattering. Raman scattering and SE were used to characterize 3C-SiC materials. From the analysis of SE we can obtain thickness of 3C-SiC films. Also from the analysis of Raman spectra, we can see the line shape of TO mode and LO mode from the fitting result, and the correlation length and carrier concentration were obtained. The result of correlation length reveals that the crystalline quality is expected to improve with film thickness increasing and Raman scattering spectra also shows the effects of the epilayer thicknesses.