采用固相烧结方法制备了纯ZnO陶瓷及GZO(Ga:ZnO)陶瓷。借助拉曼光谱和X射线衍射分别对ZnO陶瓷和不同掺Ga含量的GZO陶瓷进行了测量与分析。结果表明：GZO陶瓷均保持六角纤锌矿结构，在98 cm^-1，437 cm^-1处分别出现ZnO的特征峰E2(low)和E2(high)；比之纯ZnO陶瓷，在GZO陶瓷的拉曼光谱中出现了位于584 cm^-1以及631 cm^-1附近的新峰，位于1148 cm^-1附近的E1(LO)的倍频模随着Ga掺杂浓度的提高也发生了一些变化。对新峰的振动模归属以及掺杂后原有峰的变化进行了讨论，其中将位于631 cm^-1附近的拉曼峰，归因于Ga替代Zn位与O成键的局域振动模式（LVMGa-O）。

Pure ZnO ceramics and GZO (Ga:ZnO) ceramics were prepared by solid phase reaction method. We measured GZO ceramics with different Ga concentration by Raman spectroscopy and X-ray diffraction, and studied the variation of Raman spectra of the samples. The results showed that pure ZnO and GZO ceramics were maintained a hexagonal wurtzite structure. E2(low) and E2 (high) who were the characteristic bands of ZnO were found in 98 cm-1 and 437 cm^-1, respectively. There appeared new bands at the 584 cm-1 and 631 cm^-1 in the Raman spectra of GZO ceramic. And the band at around 1148 cm^-1 corresponding to an overtone of E1(LO) mode has also undergone some changes with the increasing of Ga doping concentration. We assigned the vibration mode of the new band and the change of the original band after doping, which for 631 cm^-1,we believed that this band is attributed to the local vibration mode that the substitution of Ga for Zn with O. (LVMGa-O) .