宽禁带半导体薄膜，包括碳化硅，氮化镓和氧化锌及其化合物以及异构体，带隙普遍在3.2 eV以上，一阶声子特征峰在100至1500 cm^-1之间。确定能带宽度和声子特征峰有很多方法，比如光致发光、拉曼散射、光学透射谱等，我们提出了一种结合椭圆偏振光谱与红外傅里叶反射谱进行传输矩阵分析的方法，能够同时确定从紫外波段（约250 nm）到远红外波段（约22000 nm）的薄膜材料色散关系和膜厚。我们构建了基于谐振子的光学函数模型，并论证这个模型很适合用于模拟由各种不同波长入射光波造成的共振吸收。

Wide band gap semiconductor films, including silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO) and their compounds and isomers, posess a band gap larger than 3.2 eV, and the characteristic phonon peak lies between 100 and 1500 cm-1. There are many methods to determine the band width and the characteristic phonon peaks, such as photoluminescence, Raman scattering and optical transmission spectra etc. Here we propose a combination of spectroscopic ellipsometry and Fourier transform infrared reflection spectrum analysis by transfer matrix method, which can determine the dispersion spectra and film thickness simultaneously, ranging from ultra-violet (around 250 nm) to far infrared (about 22000 nm). We construct an optical function model based on harmonic oscillator, and demonstrate that the model is suitable for simulating the resonance absorption of incident light with various wavelengths.