本文采用脉冲激光沉积(PLD)法在单晶硅(111)和石英玻璃衬底上制备了Ga掺杂ZnO(GZO)纳米薄膜,研究了氧压强对薄膜质量和光电性质的影响。采用XRD和SEM对薄膜的晶体结构和表面形貌进行了表征,结果表明纳米薄膜的平均粒径尺寸可以通过调整氧压强来控制,当氧压强为0.01 Pa时,薄膜的结晶质量最好。PL谱分析结果表明,反应气氛中适量的氧气可以有效降低缺陷密度,实现对GZO薄膜发光性质的调控。透射光谱分析结果显示,GZO薄膜在400~800 nm的平均光学透过率超过85%,具有良好的透光性能。霍尔测试结果表明氧压强为0.01 Pa时,GZO薄膜的电阻率最低为2.77×10-4 Ω·cm,随着氧压强继续增加,薄膜的电阻率增加,载流子浓度和霍尔迁移率均降低。
Abstract
In this paper, the pulsed laser deposition (PLD) method was used to prepare Ga-doped ZnO (GZO) nano-films on single-crystal silicon (111) and quartz glass substrates, and the effect of oxygen pressure on the quality of the films was studied. The crystal structure and surface morphology of the films were characterized by X-ray diffractometer and scanning electron microscope. The results show that the average particle size of the nano-film can be controlled by adjusting the oxygen pressure. When the oxygen pressure is 0.01 Pa, the crystal quality of the films is the best. The PL spectrum analysis results show that a proper amount of oxygen in the reaction atmosphere can effectively reduce the defect density and realize the regulation of the luminescence properties of the GZO film. The transmission spectrum analysis results show that the average optical transmittance of the GZO films at 400~800 nm exceeds 85%, then it has good light transmission performance.Hall test results show that when the oxygen pressure is 0.01 Pa, the resistivity of the GZO film is the lowest 2.77×10-4 Ω·cm. With the oxygen pressure continuing to increase, the resistivity of the film was increases, and the carrier concentration and Hall mobility were fell.
关键词
氧气压强 /
Ga掺杂 /
ZnO薄膜 /
光电性质
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Key words
Oxygen pressure /
Ga doping /
ZnO thin films /
photoelectric properties
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参考文献
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脚注
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基金
国家自然科学基金(51172194);江苏省“333工程”科研项目资助计划(BRA2018273)
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