This paper is to explore process conditions and technology of the reverse epitaxial growth of 3C-SiC thin film through the reaction of the top silicon of the substrate and carbon source. 3C-SiC film was grown on SOI substrate by Low Pressure Chemical Vapor Deposition (LPCVD) with CH₄ and H₂ gas mixture as reaction sources. Using various techniques, including x-ray diffraction (XRD), scanning electron microscope (SEM) and Fourier transform infrared (FTIR) reflectance to study the structure, properties and voltage capacitance characteristics of SOI and 3C-SiCOI samples. It’s found out that 3C-SiC film can be obtained through reverse epitaxial growth method and the current process conditions need to be further improved.