GaN based InGaN / GaN quantum well blue light-emitting diode (LED) structure was used to research theoptical properties bythe Silvaco TCAD software in this paper. The results reveal that, the peak value of spectrum with higher applied voltage shifted to lower wavelength (blueshift), and another peak arisen at 0.365μm. The luminous efficiency increased rapidly when the forward current was small and gradually became saturated with the further increase of the forward current. The sample with higher In fraction and thicker well width shown red shift and lower luminous efficiency. The simulation results provide some basis reference for the design and optimization of blue LED with InGaN / GaNquantum well structure.