Process Optimization of the Residual Stress by Reverse-Epitaxial Growth 3C-SIC Film

Process Optimization of the Residual Stress by Reverse-Epitaxial Growth 3C-SIC Film

Chinese Journal of Light Scattering ›› 2017, Vol. 29 ›› Issue (4) : 376. DOI: 10.13883/j.issn1004-5929.201704016

Process Optimization of the Residual Stress by Reverse-Epitaxial Growth 3C-SIC Film

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2017, 29(4): 376 https://doi.org/10.13883/j.issn1004-5929.201704016

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