[1]Galazka Z, Uecker R, Klimm D, et al. Scaling-Up of Bulk b-Ga₂O₃ Single Crystals by the Czochralski Method[J]. ESC J. Solid. State SC., 2017, 6(2): Q3007-Q30111.
[2]Galazka Z. b-Ga₂O₃ for wide-bandgap electronics and optoelectronics[J]. Smicond. Sci. Technol. 2018, 33: 113011.
[3]Peelaers H, Van de Walle C G. Brilouin zone and band structure of b-Ga₂O₃[J]. Phys. Status Solidi B, 2015, 252(4): 828-832.
[4]Mohamed M, Janowitz C, Unger I, et al. The electronic structure of b-Ga₂O₃[J]. Appl. Phys. Lett., 2010, 97: 211903.
[5]Tsuchiya T. Post- Rh²O³(II) transition and the high pressure-temperature phase diagram of gallia: A first-principles and x-ray diffraction study[J]. Phys. Rev. B, 2007, 76(17): 174108.
[6]Peelaers H, Van de Walle C G. Brillouin zone and band structure of b-Ga₂O₃[J]. Phys. Status Solidi B, 2015, 252(4): 828-832.
[7]Ma Y M, Chen H Y, Yang K F, et al. High-Pressure and High-Temperature Behaviour of Gallium Oxide[J]. Chinese Phys. Lett., 2008, 25(5): 1603-1605.
[8]Higashiwaki M, Sasaki K, Murakami H, et al. Recent progress in Ga₂O₃ power devices[J]. J. Semicond. Tech. Sci., 2016, 31: 034001.
[9]Polyakov A Y, Smirnov N B, Shchemerov I V, et al. Point defect induced degradation of electrical properties of Ga₂O₃ by 10 MeV proton damage[J]. Appl. Phys. Lett., 2018, 112: 032107.
[10]Higashiwaki M, Sasaki K, Kuramate A, et al. Gallium oxide (Ga₂O₃) metal-semiconductor field-effect transistors on single-crystal b-Ga₂O₃ (010) substrates[J]. Appl. Phys. Lett., 2012, 100: 013504.
[11]Zhu S, Guan S, Liu Z. Mechanism and microstructures in Ga₂O₄ pseudomartensitic solid phase transition[J]. Phys. Chem. Chem. Phys., 2016, 18: 18563-18574.
[12]Tu B, Cui Q, Xu P, et al. The pressure-induced phase transition of Ga₂O₃[J]. J. Phys.: Condes. Matter, 2002, 14: 10627-10630.
[13]Kroll P. Spinel-type gallium oxynitrides attainable at high pressure and high temperature[J]. Phys. Rev. B, 2005, 72: 144407.
[14]Machon D, McMillan P F, Xu B, et al. High-pressure study of the b-to-a transition in Ga₂O₃[J]. Phys. Rev. B, 2006, 73: 094125.
[15]Lipinska-Kalita K E, Kalita P E, Hemmers O A, et al. Equation of state of gallium oxide to 70 GPa: Comparison of quasihydrostatic and nonhydrostatic compression[J]. Phys. Rev. B, 2008, 77: 094123.
[16]Wang H, He Y, Chen W, et al. High-pressure behavior of b-Ga₂O₃ nanocrystals[J]. J. Appl. Phys., 2010, 107: 033520.
[17]Onuma T, Fujioka S, Yamaguchi T, et al. Polarized Raman spectra in b-Ga₂O₃ single crystal[J]. J. Cryst. Growth, 2014, 401(1): 330-333.
[18]He H, Orlando R, Blanco M A, et al. First-principles study of the structural, electronic, and optical properties of Ga₂O₃ in its monoclinic and hexagonal phases[J]. Phys. Rev. B, 2006, 74: 195123.
[19]Dohy D, Lucazeau G, Revcolevschi A. Raman spectra and valence force field of single-crystalline b-Ga₂O₃[J]. J. Solid State Chem., 1982, 45(2): 180-192.
[20]Litimein F, Rached D, Khenata R, et al. FPLAPW study of the structural, electronic, and optical properties of Ga₂O₃: Monoclinic and hexagonal phase[J]. J. Alloy Compd., 2009, 488: 148-156.
[21]Furthmuller J, Bechstedt F. Quasiparticle bands and spectra of Ga₂O₃ polymorphs[J]. Phys. Rev. B, 2016, 93: 115204.
[22]Kishimura H, Matsumoto H. Evaluation of the shock-induced phase transition in b-Ga₂O₃[J]. J. Appl. Phys., 2018, 57: 125503.