The electronic topological transition (ETT) of the 5d transition metal element osmium （Os） at high pressure has been controversial. So far, there are no other experimental reports that can support the presence of high-pressure ETT in Os, except for some X-ray diffraction data based on high-pressure synchrotron radiation. In this paper, we study the lattice dynamics behavior of metal Os under high pressure in the pressure range of 0~220 GPa, based on the comparative spectroscopy principle. The analysis showed that the pressure coefficient（dω/dP）of E_2g Raman mode in Os was mutated at ~ 110 GPa, and the mode-Grüneisen parameter （γ_i） produced a corresponding sudden drop. The position of the mutations in the depressed Raman phonon and mode-Grüneisen parameters is close to the anomalous point of the high-pressure synchrotron radiation diffraction experiment, which is most likely related to the Os undergoing ETT at high pressure. The anomalies of the Raman phonon and mode-Grüneisen parameters under high pressure reveals the possible ETT of Os at high pressure. Here we discuss the ETT properties of Os from the perspective of lattice dynamics, providing evidence of Raman spectroscopy for the pressure-induced ETT in Os.