The Journal of Light Scattering. 2018, 30(1): 62.
Abstract (
)
Download PDF
Knowledge map
Save
The band structure, optical properties, dielectric property, density of states, partial density of states of the p-type Na doped ZnO have been investigated by the ab-initial calcultional method based on the density functional theory. The calculational and analyzing results show that the Na doped ZnO has approximately 1.3 eV direct band gap and it is p type semiconductor, the absorption behavior is modified and the maximum absorbing peak move to the low optical photon, the density of state near Fermi level is increased and the p state electrons forms these band states, there are newly formed bands within the valence bands and conducting bands near Fermi level that are fromed by the electons of Nas、Nap、Znp、Znd and the Op state electrons. The elecrical property should be anisotropic for Na doped ZnO, the effective mass within the valence bands and the conduction bands near Fermi level are high, the carrier conduction process is mainly accomplished by the Nas、Nap、Znp as well as the Op electrons.